对比 | 型号 | 厂商 | 描述 | 价格 | ECAD | 数据手册 | 替代料 | |
---|---|---|---|---|---|---|---|---|
FLM5053-4F | SUMITOMO ELECTRIC Industries Ltd | RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC, CASE IB, 2 PIN | - | |||||
FLM5053-8F | SUMITOMO ELECTRIC Industries Ltd | RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC, CASE IB, 2 PIN | - | |||||
AD | LM5111-1MX/NOPB | Texas Instruments | 桥式驱动器,高低压开关,LM5111 Dual 5A Compound Gate Driver | |||||
FLM5972-12F | SUMITOMO ELECTRIC Industries Ltd | RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC, CASE IK, 2 PIN | - | |||||
FLM5964-18F | SUMITOMO ELECTRIC Industries Ltd | RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC, CASE IK, 2 PIN | - | |||||
FLM5964-12F/001 | SUMITOMO ELECTRIC Industries Ltd | RF Power Field-Effect Transistor, | - | |||||
FLM5053-25F | SUMITOMO ELECTRIC Industries Ltd | RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC, CASE IK, 2 PIN | - | |||||
FLM5359-12F | SUMITOMO ELECTRIC Industries Ltd | RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC, CASE IK, 2 PIN | - | |||||
ELM5964-4PST | SUMITOMO ELECTRIC Industries Ltd | RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction FET, PLASTIC, CASE I2C, 7 PIN | - | |||||
FLM5359-35F | SUMITOMO ELECTRIC Industries Ltd | RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, CASE IK, 2 PIN | - | |||||
FLM5964-25F | SUMITOMO ELECTRIC Industries Ltd | RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC, CASE IK, 2 PIN | - | |||||
FLM5359-8C | SUMITOMO ELECTRIC Industries Ltd | RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC PACKAGE-2 | - | |||||
FLM5964-45F | SUMITOMO ELECTRIC Industries Ltd | RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, CASE IK, 2 PIN | - | |||||
FLM5359-45F | SUMITOMO ELECTRIC Industries Ltd | RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, CASE IK, 2 PIN | - | |||||
FLM5359-8F | SUMITOMO ELECTRIC Industries Ltd | RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC, CASE IB, 2 PIN | - | |||||
FLM5964-4F | SUMITOMO ELECTRIC Industries Ltd | RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC, CASE IB, 2 PIN | - | |||||
ELM5964-4PS | SUMITOMO ELECTRIC Industries Ltd | RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction FET, PLASTIC, CASE I2C, 7 PIN | - | |||||
FLM5053-18F | SUMITOMO ELECTRIC Industries Ltd | RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC, CASE IK, 2 PIN | - | |||||
FLM5964-8F/001 | SUMITOMO ELECTRIC Industries Ltd | RF Power Field-Effect Transistor, | - | |||||
FLM5359-4C | SUMITOMO ELECTRIC Industries Ltd | RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC PACKAGE-2 | - | |||||
FLM5359-4F | SUMITOMO ELECTRIC Industries Ltd | RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC, CASE IB, 2 PIN | - |